advanced power n-channel enhancement mode electronics corp. power mosfet lower on- resistance bv dss 30v simple drive requirement r ds(on) 4m fast switching characteristic i d 75a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 1.3 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice 200802182 ap90t03gh/j parameter rating rohs-compliant product drain-source voltage 30 gate-source voltage 20 continuous drain current, v gs @ 10v 75 continuous drain current, v gs @ 10v 63 pulsed drain current 1 350 operating junction temperature range -55 to 150 linear derating factor 0.7 storage temperature range total power dissipation 96 -55 to 150 1 thermal data parameter the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap90t03gj) is available for low-profile applications. g d s to-251(j) g d s to-252(h) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 4 m v gs =4.5v, i d =30a - - 6 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 3 v g fs forward transconductance v ds =10v, i d =30a - 55 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =40a - 60 96 nc q gs gate-source charge v ds =24v - 8.5 nc q gd gate-drain ("miller") charge v gs =4.5v - 38 nc t d(on) turn-on delay time 2 v ds =15v - 14 - ns t r rise time i d =30a - 83 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 66 - ns t f fall time r d =0.5 - 120 - ns c iss input capacitance v gs =0v - 4090 6540 pf c oss output capacitance v ds =25v - 1010 - pf c rss reverse transfer capacitance f=1.0mhz - 890 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =45a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =30a, v gs =0 v , - 51 - ns q rr reverse recovery charge di/dt=100a/s - 63 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2 this product has been qualified for consumer market. applications or uses as criterial component in life support ap90t03gh/j
ap90t03gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 140 160 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 5 10 15 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v sd , source-to-drain voltage (v) is (a) t j =25 o c t j =150 o c 0 40 80 120 160 200 0123 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 0.5 1 1.5 2 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 3.5 4.0 4.5 5.0 246810 v gs , gate-to-source voltage (v) r ds(on) (m ?
ap90t03gh/j fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =20v v ds =24v i d =40a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 90t03 gh ywwsss date code ( ywwsss ) y last digit of the year ww week sss sequence logo meet rohs requirement 5
min nom max original original original a 2.10 2.30 2.50 a1 0.60 1.20 1.80 b1 0.40 0.60 0.80 b2 0.60 0.95 1.25 c 0.40 0.50 0.65 c1 0.40 0.55 0.70 d 6.00 6.50 7.00 d1 4.80 5.40 5.90 e1 5.00 5.50 6.00 e2 1.20 1.70 2.20 e ---- 2.30 ---- f 7.00 --- 16.70 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-251 advanced power electronics corp.
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